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Research Grade Silicon Carbide Crystal Ingots

2,500.00$25,000.00$
2,125.00$21,250.00$

SiC has the following properties:

  1. Wide Energy Bandgap;
  2. High electrical breakdown field;
  3. High saturation drift velocity;
  4. High thermal conductivity.

SiC(Silicon Carbide) material is used for the fabrication ofvery high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices,SiC-based power devices have faster switching speed higher voltages,lower parasitic resistancessmaller size, less cooling required due to high-temperature capability

SKU: 33002 Category:

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PROPERTIES OF SILICON CARBIDE CRYSTAL MATERIALS

Property 4H-SiC Single Crystal 6H-SiC Single Crystal
Lattice Parameters (Å) a=3.076

c=10.053

a=3.073

c=15.117

Stacking Sequence ABCB ABCACB
Density 3.21 3.21
Mohs Hardness ~9.2 ~9.2
Thermal Expansion Coefficient (CTE) (/K) 4-5 x 10-6 4-5 x 10-6
Refraction Index @750nm no = 2.61

ne = 2.66

no = 2.60

ne = 2.65

Dielectric Constant c ~ 9.66 c ~ 9.66
Doping Type N-type or Semi-insulating N-type or Semi-insulating
Thermal Conductivity (W/cm-K @298K)

(N-type, 0.02 ohm-cm)

a~4.2

c~3.7

Thermal Conductivity (W/cm-K @298K)

(Semi-insulating type)

a~4.9

c~3.9

 

a~4.6

c~3.2

 

Band-gap (eV) 3.23 3.02
Break-Down Electrical Field (V/cm) 3-5 x 106 3-5 x 106
Saturation Drift Velocity (m/s) 2.0 x 105 2.0 x 105
Ingot Sizes Diameter: 2, 3, 4, 6 ,8inch

Thickness: 15-30 mm

other sizes are available and can be custom-made upon request

Product Grades A Grade Zero micropipe density (MPD 1 cm-2)

B Grade Production grade (MPD 5 cm-2)

C Grade Research grade (MPD 10 cm-2)

D Grade Dummy grade (MPD 15 cm-2)

Weight 1000 g
size

2 Inches, 4 Inches, 6 Inches, 8 Inches

Type

4H-N, 4H-Si

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15% OFF
Research Grade Silicon Carbide Crystal Ingots
2,500.00$25,000.00$
2,125.00$21,250.00$
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