Research Grade Silicon Carbide Crystal Ingots
US $2,250.00 – US $22,500.00
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SiC has the following properties:
- Wide Energy Bandgap;
- High electrical breakdown field;
- High saturation drift velocity;
- High thermal conductivity.
SiC(Silicon Carbide) material is used for the fabrication ofvery high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices,SiC-based power devices have faster switching speed higher voltages,lower parasitic resistancessmaller size, less cooling required due to high-temperature capability
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PROPERTIES OF SILICON CARBIDE CRYSTAL MATERIALS
| Property | 4H-SiC Single Crystal | 6H-SiC Single Crystal |
| Lattice Parameters (Å) | a=3.076
c=10.053 |
a=3.073
c=15.117 |
| Stacking Sequence | ABCB | ABCACB |
| Density | 3.21 | 3.21 |
| Mohs Hardness | ~9.2 | ~9.2 |
| Thermal Expansion Coefficient (CTE) (/K) | 4-5 x 10-6 | 4-5 x 10-6 |
| Refraction Index @750nm | no = 2.61
ne = 2.66 |
no = 2.60
ne = 2.65 |
| Dielectric Constant | c ~ 9.66 | c ~ 9.66 |
| Doping Type | N-type or Semi-insulating | N-type or Semi-insulating |
| Thermal Conductivity (W/cm-K @298K)
(N-type, 0.02 ohm-cm) |
a~4.2
c~3.7 |
|
| Thermal Conductivity (W/cm-K @298K)
(Semi-insulating type) |
a~4.9
c~3.9
|
a~4.6
c~3.2
|
| Band-gap (eV) | 3.23 | 3.02 |
| Break-Down Electrical Field (V/cm) | 3-5 x 106 | 3-5 x 106 |
| Saturation Drift Velocity (m/s) | 2.0 x 105 | 2.0 x 105 |
| Ingot Sizes | Diameter: 2, 3, 4, 6 ,8inch
Thickness: 15-30 mm other sizes are available and can be custom-made upon request |
|
| Product Grades | A Grade Zero micropipe density (MPD 1 cm-2)
B Grade Production grade (MPD 5 cm-2) C Grade Research grade (MPD 10 cm-2) D Grade Dummy grade (MPD 15 cm-2) |
|
| Weight | 1000 g |
|---|---|
| size | 2 Inches, 4 Inches, 6 Inches, 8 Inches |
| Type | 4H-N, 4H-Si |
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| Weight | 1000 g |
|---|---|
| size | 2 Inches, 4 Inches, 6 Inches, 8 Inches |
| Type | 4H-N, 4H-Si |
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