Production Grade Silicon Carbide Crystal Ingots

$3,125.00$31,250.00
$2,812.50$28,125.00

Get a full refund within three days of receiving your goods—no questions asked, if you’re not satisfied,If the time limit is exceeded, please contact our customer service or email us at service@jcvap.com with a reasonable explanation.

If your goods are damaged within 30 days of normal use, contact our customer service for a prompt replacement.

Customer service is available seven days a week, except on major holidays..

SiC has the following properties:

  1. Wide Energy Bandgap;
  2. High electrical breakdown field;
  3. High saturation drift velocity;
  4. High thermal conductivity.

SiC(Silicon Carbide) material is used for the fabrication ofvery high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices,SiC-based power devices have faster switching speed higher voltages,lower parasitic resistancessmaller size, less cooling required due to high-temperature capability

Reviews

There are no reviews yet

Add a review
You must be logged in to post a review Log In

PROPERTIES OF SILICON CARBIDE CRYSTAL MATERIALS

Property 4H-SiC Single Crystal 6H-SiC Single Crystal
Lattice Parameters (Å) a=3.076

c=10.053

a=3.073

c=15.117

Stacking Sequence ABCB ABCACB
Density 3.21 3.21
Mohs Hardness ~9.2 ~9.2
Thermal Expansion Coefficient (CTE) (/K) 4-5 x 10-6 4-5 x 10-6
Refraction Index @750nm no = 2.61

ne = 2.66

no = 2.60

ne = 2.65

Dielectric Constant c ~ 9.66 c ~ 9.66
Doping Type N-type or Semi-insulating N-type or Semi-insulating
Thermal Conductivity (W/cm-K @298K)

(N-type, 0.02 ohm-cm)

a~4.2

c~3.7

Thermal Conductivity (W/cm-K @298K)

(Semi-insulating type)

a~4.9

c~3.9

 

a~4.6

c~3.2

 

Band-gap (eV) 3.23 3.02
Break-Down Electrical Field (V/cm) 3-5 x 106 3-5 x 106
Saturation Drift Velocity (m/s) 2.0 x 105 2.0 x 105
Ingot Sizes Diameter: 2, 3, 4, 6 ,8inch

Thickness: 15-30 mm

other sizes are available and can be custom-made upon request

Product Grades A Grade Zero micropipe density (MPD 1 cm-2)

B Grade Production grade (MPD 5 cm-2)

C Grade Research grade (MPD 10 cm-2)

D Grade Dummy grade (MPD 15 cm-2)

Weight 1000 g
size

2 Inches, 4 Inches, 6 Inches, 8 Inches

Type

4H-N, 4H-Si

Reviews

There are no reviews yet

Add a review
You must be logged in to post a review Log In

Q & A

There are no questions yet

Ask a question

Your question will be answered by a store representative or other customers.

Thank you for the question!

Your question has been received and will be answered soon. Please do not submit the same question again.

Error

Warning

An error occurred when saving your question. Please report it to the website administrator. Additional information:

Add an answer

Thank you for the answer!

Your answer has been received and will be published soon. Please do not submit the same answer again.

Error

Warning

An error occurred when saving your answer. Please report it to the website administrator. Additional information:

Weight 1000 g
size

2 Inches, 4 Inches, 6 Inches, 8 Inches

Type

4H-N, 4H-Si

Recommend

10% OFF
Production Grade Silicon Carbide Crystal Ingots
$3,125.00$31,250.00
$2,812.50$28,125.00
Select options
Scroll to Top

My Wishlist

Product name Unit price Quantity Stock status
No products added to the wishlist

FOLLOW US