PROPERTIES OF SILICON CARBIDE CRYSTAL MATERIALS
Property | 4H-SiC Single Crystal | 6H-SiC Single Crystal |
Lattice Parameters (Å) | a=3.076
c=10.053 |
a=3.073
c=15.117 |
Stacking Sequence | ABCB | ABCACB |
Density | 3.21 | 3.21 |
Mohs Hardness | ~9.2 | ~9.2 |
Thermal Expansion Coefficient (CTE) (/K) | 4-5 x 10-6 | 4-5 x 10-6 |
Refraction Index @750nm | no = 2.61
ne = 2.66 |
no = 2.60
ne = 2.65 |
Dielectric Constant | c ~ 9.66 | c ~ 9.66 |
Doping Type | N-type or Semi-insulating | N-type or Semi-insulating |
Thermal Conductivity (W/cm-K @298K)
(N-type, 0.02 ohm-cm) |
a~4.2
c~3.7 |
|
Thermal Conductivity (W/cm-K @298K)
(Semi-insulating type) |
a~4.9
c~3.9
|
a~4.6
c~3.2
|
Band-gap (eV) | 3.23 | 3.02 |
Break-Down Electrical Field (V/cm) | 3-5 x 106 | 3-5 x 106 |
Saturation Drift Velocity (m/s) | 2.0 x 105 | 2.0 x 105 |
Ingot Sizes | Diameter: 2, 3, 4, 6 ,8inch
Thickness: 15-30 mm other sizes are available and can be custom-made upon request |
|
Product Grades | A Grade Zero micropipe density (MPD 1 cm-2)
B Grade Production grade (MPD 5 cm-2) C Grade Research grade (MPD 10 cm-2) D Grade Dummy grade (MPD 15 cm-2) |
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