Diamondium Terp Pearls Grade B 4.5mm
$36.98 – $66.99
$31.43 – $56.94
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Diamondium Terp Pearls (Grade B )
Low specific heat capacity coupled with high conductivity yields fastest heating of any vaporization surface (Thermal Diffusivity).
This new substance will bring a completely new experience and unparalleled flavor to your dabbing.
Diamondium Grade B Terp Pearls are actually made of Moissanite .It is Single Crystal Silicon Carbide(Monocrystal SiC).
In nature, there are primarily three types of SiC, that is 3C-SiC, 4H-SiC and 6H-SiC
The crystal structure of Moissanite consists of a hexagonal lattice formed by silicon and carbon atoms(6H-SiC), with each unit cell containing six silicon atoms and six carbon atoms. This structure gives Moissanite its hardness and fire similar to that of diamonds.
These three structures have different thermal conductivities.
That means the thermal conductivity of Moissanite (Diamondium Grade B Terp Pearls) is more than twice that of ALN(Aluminum nitride).
All the above data and information come from the following references:
1. M.S. Aziz, Z. Mohammed, R.I. Alip. 2018. Faculty of Electrical Engineering. The Effect of SiC Polytypes on the HeatDistribution Efficiency of a Phase Change Memory.
2. Goldberg Yu., Levinshtein M.E., Rumyantsev S.L.2001 Properties of Advanced Semiconductor Materials GaN, AlN, SiC, BN, SiC, SiGe, 93-148.
3. Amirthan G, Udaya A, Balasubramanian M. 2011 Thermal conductivity studies on Si / SiCceramic composites. 09 003.
4. Harris, G.L. 1995 Thermal conductivity of SiC, 5-6.
Note:For the 4.5mm size Grade B terp pearls,the error range is between 0 and 0.15mm.
Diamondium Terp Pearls (Grade B):
Monocrystal SiC is an exotic hard material that has only recently become commercially available. It is exceedingly difficult to produce and requires substantial amounts of energy and infrastructure. This material is powering the future of high energy density electronics, especially pertaining to charging stations for electronic cars where extremely high levels of power dissipation are required. Beyond this, Monocrystal SiC has the potential to be utilized in a multitude of end use applications from defense industries，chips and semiconductors to medical implants and more.
Monocrystal SiC is produced through a highly refined process of essentially vaporizing high purity silicon carbide or SiC precursors and condensing the vapor atom by atom into an extremely high purity, monocrystal boule. This process gives the silicon carbide a perfect or near perfect monocrystal lattice structure, which massively increases its thermal conductivity by comparison to ceramic silicon carbides, or virtually any other hard material on the planet (other than diamond). This process also creates a 99.9999% pure material that is extremely homogenous and has little to no inconsistency whatsoever.
Thermal conductivity of 490 w/m/k yields an unprecedentedly low operating temperature as little as 330*F, which is far lower than any other vaporization surface currently available on the market.
Low specific heat capacity coupled with high conductivity yields fastest heating of any vaporization surface (Thermal Diffusivity)
The exceedingly low emissivity coefficient that results from mirror polishing yields an extremely slow rate of cooling. On a thermal camera, this product will appear to be similar to background / room temperature even when above 500* Fahrenheit.
Torches clean in only seconds thanks to it’s ultra thermal diffusivity.
Nontoxic & Biocompatible.
Melting point of over 5,000*F.
| Weight | 50 g |
|---|---|
| Color | |
| Quantity | 1pc, 2pcs |
| Warehouse |
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| Weight | 50 g |
|---|---|
| Color | |
| Quantity | 1pc, 2pcs |
| Warehouse |
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